Properties of silicon nitride films by plasma-CVD used SiH4-N2 gas system.

Numerical Modeling of Non-equilibrium Plasma Discharge of Hydrogenated Silicon Nitride (SiH4/NH3/H2)

In this work, we model a radiofrequency discharge of hydrogenated silicon nitride in a capacitive coupled plasma reactor using Maxwellian and non-Maxwellian electron energy distribution function. The purpose is to investigate whether there is a real advantage and a significant contribution using non-Maxwellian electron energy distribution function rather than Maxwellian one for determining the ...

MICROSTRUCTURAL STUDY OF SILICON NITRIDE WHISKERS PRODUCED BY NITRIDATION OF PLASMA-SPRAYED SILICON LAYERS

plasma-sprayed silicon layers have been used to produce silicon nitride layers with fibrous microstructure which optimizes fracture toughness and strength. SEM examination of the specimens shows that the surface is covered by fine needles and whiskers of Si3N4.In order to study the oxygen contamination effect as well as other contaminants introduced during spraying and nitridation processes, su...

A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy

Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures

The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that the etch rates of Si3N4 and SiO2 are not limited by the amount of fluorine arriving on the surface only. Adding N2 in small amounts to a CF4 /O2 micr...

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films